A fully integrated GaAs HBT power amplifier with enhanced efficiency for 5-GHz WLAN applications

GHz WLAN InGaP / GaAs Power Amplifier with Temperature Compensation Technique

© 2009 Sang-Woong Yoon et al. 601 ABSTRACT⎯This letter presents a high performance 2.4 GHz two-stage power amplifier (PA) operating in the temperature range from -30C to +85C for IEEE 802.11g, wireless local area network application. It is implemented in InGaP/GaAs hetero-junction bipolar transistor technology and has a bias circuit employing a temperature compensation technique for error vecto...

A fully integrated 2.45 GHz 0.25μm CMOS power amplifier

A fully integrated differential class-AB power amplifier has been designed in a 0.25um CMOS technology. It is intended for medium output power ranges such as Bluetooth class I, and has an operating frequency of 2.45GHz. By using two parallel output stages that can he switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output pow...

A Fully Integrated Dual-Band WLP CMOS Power Amplifier for 802.11n WLAN Applications

A fully integrated dual-band CMOS power amplifier (PA) is developed for 802.11n WLAN applications using wafer-level package (WLP) technology. This paper presents a detailed design for the optimal impedance of dual-band PA (2 GHz/5 GHz PA) output transformers with low loss, which is provided by using 2:2 and 2:1 output transformers for the 2 GHz PA and the 5 GHz PA, respectively. In addition, se...

Fully Integrated CMOS Power Amplifier

An 8.4 GHz SiGe/Si HBT-Based MMIC Power Amplifier

A single-stage X-band MMIC power amplifier incorporating a SiGe/Si power HBT and lumped passive components is reported. The power HBT is characterized by an fmax of 67 GHz and a BVCBO of more than 24 V. The matching circuits were designed for maximum output power using on-chip spiral inductors and SiO MIM capacitors. Continuous wave measurements were made at 8.4 GHz, under class A operation. Th...